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APTM20DAM04G
Boost chopper MOSFET Power Module
VBUS CR1
VDSS = 200V RDSon = 4m typ @ Tj = 25C ID = 372A @ Tc = 25C
Application * * * AC and DC motor control Switched Mode Power Supplies Power Factor Correction
OUT
Features
Q2
*
G2
S2
0/VBUS
* * * Benefits
S2 G2
VBUS
0/VBUS
OUT
Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* * * * * Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Max ratings 200 372 278 1488 30 5 1250 100 50 3000 Unit V A V m W A mJ
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM20DAM04G - Rev 2
July, 2006
APTM20DAM04G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Typ
Tj = 25C
T j = 125C
VGS = 10V, ID = 186A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
4 3
Max 500 2000 5 5 200
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 372A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 372A R G = 1.2 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 372A, R G = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 372A, R G = 1.2
Min
Typ 28.9 9.32 0.58 560 212 268 32 64 88 116 3396 3716 3744 3944
Max
Unit nF
nC
ns
J
J
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C
Min 200
Typ
Max 250 750
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=200V IF = 300A IF = 600A IF = 300A IF = 300A VR = 133V di/dt = 600A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
300 1 1.4 0.9 60 110 600 2520
1.1 V
Qrr
Reverse Recovery Charge
nC
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APTM20DAM04G - Rev 2
July, 2006
trr
Reverse Recovery Time
ns
APTM20DAM04G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.1 0.2 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
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3-6
APTM20DAM04G - Rev 2
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
July, 2006
APTM20DAM04G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1200
VGS=15V 10V 9V 8.5V 8V 7.5V 7V 6.5V
3000 ID, Drain Current (A) 2500 2000 1500 1000 500 0
Transfert Characteristics
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
ID, Drain Current (A)
1000 800 600 400 200 0
TJ=25C TJ=125C TJ=-55C
0
4
8
12
16
20
24
28
0
VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to V GS=10V @ 186A
1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150
July, 2006 4-6 APTM20DAM04G - Rev 2
1.1 1
VGS=10V
VGS=20V
0.9 0.8 0 100 200 300 400 500 600 ID, Drain Current (A)
TC, Case Temperature (C)
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APTM20DAM04G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 10000
VGS=10V ID= 186A
1000
limited by RDSon
100s 1ms
100 Single pulse TJ=150C TC=25C 1
10ms 100ms
10
1 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 I D=372A V DS=40V 12 TJ =25C 10 8 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC)
July, 2006
VDS=100V
VDS=160V
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APTM20DAM04G - Rev 2
APTM20DAM04G
Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 100 200 300 400 500 I D, Drain Current (A) 600
VDS=133V RG=1.2 T J=125C L=100H
Rise and Fall times vs Current 160 140 t r and tf (ns)
V DS=133V R G=1.2 T J=125C L=100H
t d(off)
120 100 80 60 40 20 0 0
tf
t d(on)
tr
100
200 300 400 500 ID, Drain Current (A)
600
Switching Energy vs Current 8 Switching Energy (mJ) 6 4 2 Eoff 0 0 100 200 300 400 500 600 I D, Drain Current (A) Operating Frequency vs Drain Current
VDS=133V D=50% RG=1.2 T J=125C T C=75C ZVS ZCS Hard switching VDS=133V RG=1.2 TJ=125C L=100H
Switching Energy vs Gate Resistance 12
V DS=133V ID=372A T J=125C L=100H
Eoff Eon
10 8 6 4 2 0
Eon and Eoff (mJ)
Eoff
Eon
2.5
5
7.5
10
12.5
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 TJ=150C
350 300 Frequency (kHz) 250 200 150 100 50 0 50 100 150 200 250 300 350 I D, Drain Current (A)
100
TJ =25C
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM20DAM04G - Rev 2

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